The Persistence of Memory
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To investigate how microscopic disorder influences the evolution
of the magnetic domains—and perhaps enables them to remember
their previous arrangement as these systems are cycled around their
major hysteresis loops—the collaborators deliberately introduced
disorder in the form of interfacial roughness into a series of thin
cobalt–platinum multilayer films representative of the materials
in the newest ultrahigh-density disk drives. The films had domain
widths of about 100 nm and their magnetization was perpendicular
to the plane of the film.

Diagram of the experiment. Soft x rays from the
undulator pass through a small pinhole and then scatter through
a sample. A soft x-ray CCD collects the radiation. A uniform magnetic
field applied to the sample can manipulate the magnetic domains.
The coherent magnetic speckle metrology technique at ALS Beamline
9.0.1 was used to directly probe the effect of disorder on the
spatial structure of the magnetic domain configuration. In this
technique, linearly polarized, soft x rays pass through the films,
and a CCD camera collects the scattered light. To be sensitive to
the magnetic domains, the photon energy was tuned to the cobalt
2p→3d resonant transition. Dependent on the polarization
of the incident light relative to the orientation of the electron
spin, this resonant scattering process is the quantum analogue of
the classical Faraday effect.
Coherent x rays, produced by passing them through a pinhole, generate
highly speckled scattering patterns, with the random arrangement
of speckles being due to the exact configuration of the magnetic
domains in the sample. In effect, each speckle pattern acts as a
unique fingerprint for the magnetic domain configuration. Small
changes in the domain structure will change the speckles, and comparison
of the different speckle patterns provides a quantitative determination
of how much the domain structure has changed.

Three-square-micron magnetic force microscopy
images of the magnetic domain structure at remanence for samples
with (from left to right) increasing disorder. Note the apparent
disappearance of the labyrinthine structure as the disorder grows.
The experiments immediately answered one longstanding question:
How is the magnetic domain configuration at one point on the major
hysteresis loop related to the configurations at the same point
on the loop during subsequent cycles. This is called microscopic
return-point memory (RPM). For the smooth samples with magnetically
soft loops, the researchers found little or no RPM. In sharp contrast,
they always found strong RPM for rougher, hard-loop samples. In
short, the RPM was partial and imperfect.
The researchers also posed for the first time and then answered
a second important question: How are the magnetic domains at one
point on the major loop related to the domains at the complementary
point, the inversion symmetric point on the loop, during the same
and during subsequent cycles? This is called complementary-point
memory (CPM). As with RPM, they found the CPM was also partial and
imperfect. They found no CPM for the lowest-disorder samples, but
for the more disordered samples, they found significant, nonzero
CPM, and the CPM was always a little smaller than the RPM.

Major hysteresis loop and evolution of the magnetic
domains in the sample with the lowest disorder and their corresponding
speckle patterns. Starting from positive saturation (all the magnetic
spins are pointed up), small areas of the sample begin to reverse
their magnetization, then a labyrinth of magnetic domains is produced,
and finally the remaining up domains grow smaller and eventually
disappear completely when the spins are uniformly pointed down.
No existing theory was capable of reproducing these experimental
results. With the asymmetry between RPM and CPM suggesting a theory
that incorporates a small component to break the spin inversion
symmetry, the researchers developed two new theories fit their data.
Their future work will focus on determining whether or not one or
both of the new theories is correct and on determining whether RPM
and CPM exist in other magnetic systems.
Research conducted by M.S. Pierce, C.R. Buechler, and L.B. Sorenson
(University of Washington, Seattle); J.J. Turner and S.D. Kevan
(University of Oregon); E.A. Jagla (Abdus Salam International Centre
for Theoretical Physics, Italy); J.M. Deutsch, T. Mai, and O. Narayan
(University of California, Santa Cruz); J.E. Davies and K. Liu (University
of California, Davis); J.H. Dunn (MAX Laboratory, Sweden); K.M.
Chesnel and J.B. Kortright (Berkeley Lab); and O. Hellwig and E.E.
Fullerton (Hitachi Global Storage Technologies).
Research Funding: U.S. Department of Energy, Office of Basic Energy
Sciences (BES); Lawrence Livermore National Laboratory; and Deutsche
Forschungsgemeinshaft. Operation of the ALS is supported by BES.
Publications about this research: M.S. Pierce, C.R. Buechler, L.B.
Sorenson, J.J. Turner, S.D. Kevan, E.A. Jagla, J.M. Deutsch, T.
Mai, O. Narayan, J.E. Davies, K. Liu, J.H. Dunn, K.M. Chesnel, J.B.
Kortright, O. Hellwig, and E.E. Fullerton, "Disorder-induced
microscopic magnetic memory," Phys. Rev. Lett. 94,
017202 (2005); E.A. Jagla, "Hysteresis loops of magnetic thin
films with perpendicular anisotropy," Phys. Rev. B
72, 094406 (2005); and J.M. Deutsch and T. Mai,
"Mechanism for nonequilibrium symmetry breaking and pattern
formation in magnetic films," Phys. Rev. E 72,
016115 (2005). |