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Beamline 11.3.2 Print
Tuesday, 20 October 2009 09:23

 

Inspection of EUV lithography masks

 

GENERAL BEAMLINE INFORMATION

Operational

Yes, but not open to users

Source characteristics

Bend magnet

Energy range

50–1000 eV

Monochromator

VLS-PGM

Calculated flux (1.9 GeV, 400 mA)

1011 photons/s/0.01%BW at 100 eV

Resolving power (E/ΔE)

7000

Endstations

The SEMATECH Berkeley Actinic Inspection Tool

Detector 2048 x 2048 EUV CCD
Characteristics 900-1000x zoneplate microscope

Spot size at sample

1–5 microns

Spatial resolution 60 nm
Sample format EUV Photolithography masks: 6" glass plate, multilayer coated for normal incidence reflectivity at 13.4 nm
Sample preparation Cleanroom handling
Sample environment 2.0 x 10-7 Torr base pressure
Scientific applications EUV lithography
Local contacts/ Spokespersons
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Center for X-Ray Optics, Berkeley Lab
Phone: (510) 495-2261
Fax: (510) 486-4550
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Center for X-Ray Optics, Berkeley Lab
Phone: (510) 486-6622
Fax: (510) 486-4550
Name: This e-mail address is being protected from spambots. You need JavaScript enabled to view it
Center for X-Ray Optics, Berkeley Lab
Phone: (510) 486-6921
Fax: (510) 486-4550

Beamline phone number

(510) 495-2113

Website http://AIT.lbl.gov